Disturb-Free Operations of Multilevel Cell Ferroelectric FETs for Nand Applications-Reference-Cited by-同舟云学术

Disturb-Free Operations of Multilevel Cell Ferroelectric FETs for Nand Applications

Published:2023-04 Issue:4 Volume:70 Page:1653-1658
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jin Chengji¹^ORCID,Xu Jiacheng¹,Gu Jiani¹^ORCID,Zhao Jiayi²,Jia Xiaole³,Chen Jiajia¹^ORCID,Liu Huan¹,Zhang Miaomiao¹,Peng Yue³^ORCID,Chen Bing²^ORCID,Cheng Ran²^ORCID,Liu Yan³^ORCID,Yu Xiao¹^ORCID,Han Genquan¹

Affiliation:

1. Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou, China

2. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

3. School of Microelectronics, Xidian University, Xi'an, China

Funder

National Natural Science Foundation of China

Scientific Research Project of Zhejiang Lab

Zhejiang Province Key Research and Development Programs

Zhejiang Provincial Natural Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10043645.pdf?arnumber=10043645

Reference28 articles.

1. An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

2. Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

3. Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

4. Investigating Ferroelectric Minor Loop Dynamics and History Effect—Part I: Device Characterization

5. Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Demonstration of Non-Volatile Boolean Logic With Field Configurable 1FeFET-1RRAM Technology;IEEE Electron Device Letters;2024-06

2. Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation;Solid-State Electronics;2024-06

3. Dual Ferroelectric Stack of HfZrO₂/Al:HfO₂ With Tunable Coercive Voltage for High-Density Memory Applications;IEEE Transactions on Electron Devices;2024-06

4. Investigation of Read Disturb for Hf_0.5Zr_0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing;Advanced Functional Materials;2024-03-21