A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric Films
Author:
Affiliation:
1. School of Microelectronics, Xidian University, Xi’an, China
2. Xi’an UniIC Semiconductors Company Ltd, Xi’an, China
3. Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, China
Funder
National Key Research and Development Project
National Natural Science Foundation of China
Major Scientific Research Project of Zhejiang Laboratory
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10061541.pdf?arnumber=10061541
Reference30 articles.
1. HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability
2. Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes
3. A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices
4. Demonstration of low EOT gate stack and record transconductance on Lg = 90 nm nFETs using 1.8 nm ferroic HfO2-ZrO2 Su-perlattice;li;IEDM Tech Dig,2022
5. Structural and dielectric properties of crystalline and amorphous ZrO2
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1. Optimization of ferroelectricity and endurance of hafnium zirconium oxide thin films by controlling element inhomogeneity;Journal of Advanced Ceramics;2024-07
2. Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses;IEEE Transactions on Electron Devices;2024-06
3. Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing;Nanotechnology;2023-10-05
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