A Metal-Oxide Thin-Film Transistor Technology With Donor-Species Drive-In Pretreatment
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, New Territories, Hong Kong
Funder
National Key R&D Program
Fundamental and Applied Fundamental Research Fund of Guangdong Province
Hong Kong Innovation and Technology Commission
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10261402/10248959.pdf?arnumber=10248959
Reference15 articles.
1. Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications
2. Fluorinated indium‐gallium‐zinc oxide thin‐film transistor with reduced vulnerability to hydrogen‐induced degradation
3. Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics
4. Gate Insulator Engineering in Top-Gated Indium-Tin-Oxide-Stabilized ZnO Thin-Film Transistors
5. A Bottom-Gate Metal–Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions
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