A Universal Temperature-Dependent Carrier Backscattering Model for Low-Temperature High-Performance CMOS Applications-Reference-Cited by-同舟云学术

A Universal Temperature-Dependent Carrier Backscattering Model for Low-Temperature High-Performance CMOS Applications

Published:2024-01 Issue:1 Volume:71 Page:107-113
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sun Ying¹^ORCID,Gu Yuchen¹,Xu Kezhi²^ORCID,Liu Dong³^ORCID,Chen Bing²^ORCID,Xu Xiaoxin⁴^ORCID,Cheng Ran¹^ORCID,Han Genquan²^ORCID

Affiliation:

1. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

2. School of Microelectronics and the Hangzhou Institute of Technology, Xidian University, Xi’an, China

3. Technology Innovation and Training Center, Polytechnic Institute, Zhejiang University, Hangzhou, China

4. Institute of Microelectronics of Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing, China

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Kun-Peng Program of Zhejiang Province

Beijing Municipal Science and Technology Commission Program

Association for Science and Technology

Technology Innovation and Training Center, Polytechnic Institute, Zhejiang University, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10235747.pdf?arnumber=10235747

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3. Strained Silicon-on-Insulator Platform for Co-Integration of Logic and RF—Part II: Comb-Like Device Architecture

4. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part II: Experimental Verification

5. Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions

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