A True Random Number Generator Based on Semiconductor-Vacancies Junction Entropy Source and Square Transform Method-Reference-Cited by-同舟云学术

A True Random Number Generator Based on Semiconductor-Vacancies Junction Entropy Source and Square Transform Method

Published:2023-10 Issue:10 Volume:70 Page:5484-5488
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhao Jiayi¹^ORCID,Chen Bing¹^ORCID,Wang Wannian¹,Xia Wentai¹,Ye Jiabao¹,Bi Haoxiong¹,Cao Jifang¹,Jin Chengji²^ORCID,Yu Xiao²^ORCID,Cheng Ran¹^ORCID,Liu Yan³^ORCID,Han Genquan³

Affiliation:

1. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

2. Research Center for Intelligent Chips and Devices, Zhejiang Laboratory, Hangzhou, China

3. Hangzhou Institute of Technology, Xidian University, Hangzhou, China

Funder

National Natural Science Foundation of China

Major Scientific Research Project of Zhejiang Laboratory

Zhejiang Province Key Research and Development Programs

Kun-Peng Program of Zhejiang Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10219556.pdf?arnumber=10219556

Reference19 articles.

1. A novel true random number generator based on a stochastic diffusive memristor

2. Robust True Random Number Generator using Stochastic Short-Term Recovery of Charge Trapping FinFET for Advanced Hardware Security

3. RTN based oxygen vacancy probing method for Ox-RRAM reliability characterization and its application in tail bits

4. Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

5. A reconfigurable RRAM physically unclonable function utilizing post-process randomness source with <6 × 10?6 native bit error rate;pang;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2019

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