Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction-Reference-Cited by-同舟云学术

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Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction

Published:2023-03 Issue:3 Volume:70 Page:1430-1435
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shashidhara M.¹^ORCID,Nehra Vikas²,Srivatsava Shobit¹^ORCID,Panwar Sourabh¹^ORCID,Acharya Abhishek¹^ORCID

Affiliation:

1. Department of Electronics Engineering, Sardar Vallabhai National Institute of Technology, VLSI Design Group, Surat, Gujarat, India

2. Department of Electronics and Communication, Deenbandhu Chhotu Ram University of Science and Technology, Murthal, Sonipat, Haryana, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10025690.pdf?arnumber=10025690

Reference33 articles.

1. External‐Field‐Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole‐Coupled Composite Structure

2. Modeling of Voltage-Controlled Spin–Orbit Torque MRAM for Multilevel Switching Application

3. Spin–Orbit Torque Switching in an All‐Van der Waals Heterostructure

4. Room Temperature Highly Efficient Topological Insulator/Mo/CoFeB Spin-Orbit Torque Memory with Perpendicular Magnetic Anisotropy

5. Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields;yu;Nature Nanotechnol,2014

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field-free spin–orbit torque switching of magnetic tunnel junction structure based on two-dimensional van der Waals WTe2;AIP Advances;2024-03-01

2. Impact of Unconventional Torque on the Performance of Weyl-Semimetal-Based SOT-MTJ: A Micromagnetic Study;IEEE Transactions on Electron Devices;2024-03

3. Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices;Semiconductor Science and Technology;2024-02-07

4. Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance;Solid-State Electronics;2023-10

5. Configurable 8T SRAM-based Computing In- Memory Architecture for Enabling Shift Operation and Multibit Dot-Product Engines;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

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