Three Programming States in Bilayer Ga–Sb Phase Change Memory With AlO<sub> <i>x</i> </sub> Diffusion Barrier-Reference-Cited by-同舟云学术

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Three Programming States in Bilayer Ga–Sb Phase Change Memory With AlO_x Diffusion Barrier

Published:2023-07 Issue:7 Volume:70 Page:3511-3516
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gong Haibo¹^ORCID,Ume Rubab¹^ORCID,Tokranov Vadim¹,Yakimov Michael¹^ORCID,Brew Kevin²^ORCID,Cohen Guy³^ORCID,Schujman Sandra¹^ORCID,Beckmann Karsten¹,Cady Nathaniel¹^ORCID,Oktyabrsky Serge¹^ORCID

Affiliation:

1. SUNY Polytechnic Institute, Albany, NY, USA

2. IBM AI Hardware Center, Albany, NY, USA

3. IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA

Funder

Semiconductor Research Corporation

State University of New York (SUNY)-International Business Machines Corporation (IBM) Artificial Intelligence (AI) Collaborative Research Alliance

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10159202/10130459.pdf?arnumber=10130459

Reference29 articles.

1. Multilevel phase-change memory

2. Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed

3. Two-bit multi-level phase change random access memory with a triple phase change material stack structure

4. Microstructures corresponding to multilevel resistances of In3Sb1Te2 phase-change memory

5. Multilevel data storage in multilayer phase change material

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