Multilevel data storage in multilayer phase change material

Author:

Lu Yegang1,Wang Miao1ORCID,Song Sannian2,Xia Mengjiao3,Jia Yu3,shen Xiang1,Wang Guoxiang1,Dai Shixun1,Song Zhitang2

Affiliation:

1. Faculty of Electrical Engineering and Computer Science, Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo University, Zhejiang 315211, China

2. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

3. International Laboratory of Quantum Functional Materials of Henan, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China

Funder

China Postdoctoral Science Foundation

Ningbo municipal Natural Science Foundation of China

Science and Technology Public Project of Zhejiang Province

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference26 articles.

1. Projected phase-change memory devices

2. Phase change materials and phase change memory

3. N. Papandreou , A. Pantazi , A. Sebastian , M. Breitwisch , C. Lam , H. Pozidis , and E. Eleftheriou , in Proceedings of the 17th IEEE International Conference on Electronics, Circuits, and Systems (ICECS) (2010), Vol. 6, p. 1017.

4. Microstructures corresponding to multilevel resistances of In3Sb1Te2 phase-change memory

5. Phase transition characteristics of Al-Sb phase change materials for phase change memory application

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