Investigation on the Switching Transient of GaAs PCSS Operating in the Transition From Linear to Nonlinear Mode
Author:
Affiliation:
1. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan, China
Funder
Foundation of State Key Laboratory of Pulsed Power Laser Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10106527/10082872.pdf?arnumber=10082872
Reference24 articles.
1. Characterization of photoconductive semiconductor switches under nonlinear mode condition
2. Synchronization of two GaAs photoconductive semiconductor switches triggered by two laser diodes
3. Peculiar Photoconductivity in High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch
4. Investigation on the Mechanism of Triggering Efficiency of High-Power Avalanche GaAs Photoconductive Semiconductor Switch
5. Ultrahigh field multiple Gunn domains as the physical reason for superfast (picosecond range) switching of a bipolar GaAs transistor
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improved On-State Performances of GaAs PCSS Based on an Optical Internal Reflection Structure;IEEE Electron Device Letters;2024-02
2. Switching jitter of avalanche gallium arsenide photoconductive semiconductor switch influenced by multiple avalanche domains;Review of Scientific Instruments;2024-01-01
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