Impact of Temperature-Induced Oxide Defects on Hf x Zr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
Author:
Affiliation:
1. Department of Electrical and Information Technology and NanoLund, Lund University, Lund, Sweden
Funder
Swedish Research Council
NanoLund Centre for Nanoscience at Lund University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10053598/10038504.pdf?arnumber=10038504
Reference25 articles.
1. Giant Electroresistance in Ferroelectric Tunnel Junctions
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3. Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
4. Theoretical current-voltage characteristics of ferroelectric tunnel junctions
5. The viability of analog-based accelerators for neuromorphic computing: a survey
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1. Ferroelectric Tunnel Junction Memristors for In‐Memory Computing Accelerators;Advanced Intelligent Systems;2023-12-24
2. Exploring Multi‐Bit Logic In‐Memory with Memristive HfO2‐Based Ferroelectric Tunnel Junctions;Advanced Electronic Materials;2023-12-05
3. Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations;IEEE Transactions on Electron Devices;2023-10
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