Memristor-Inspired Digital Logic Circuits and Comparison With 90-/180-nm CMOS Technologies-Reference-Cited by-同舟云学术

Memristor-Inspired Digital Logic Circuits and Comparison With 90-/180-nm CMOS Technologies

Published:2024-01 Issue:1 Volume:71 Page:301-307
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nawaria Megha¹,Kumar Sanjay²^ORCID,Gautam Mohit Kumar³^ORCID,Dhakad Narendra Singh⁴^ORCID,Singh Rohit⁵^ORCID,Singhal Sonal⁵,Kumar Pawan⁶^ORCID,Vishvakarma Santosh Kumar⁴^ORCID,Mukherjee Shaibal¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Hybrid Nanodevice Research Group (HNRG), Indian Institute of Technology Indore, Indore, Madhya Pradesh, India

2. School of Engineering, University of Edinburgh, Scotland, U.K

3. Qualcomm India Private Ltd, Bengaluru, India

4. Department of Electrical Engineering, Nanoscale Devices, VLSI Circuit and System Design (NSDCS), Indian Institute of Technology Indore, Indore, Madhya Pradesh, India

5. Electrical Engineering Department, Shiv Nadar Institution of Eminence (Deemed to be University), Dadri, India

6. Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India

Funder

Council of Scientific and Industrial Research (CSIR) Project

JSPS Invitational Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10143670.pdf?arnumber=10143670

Reference25 articles.

1. Design and Analysis of Logic Gates using GaN based Double Gate MOSFET (DG-MOS)

2. Power consumption analysis in static CMOS gates

3. Efficient and self-adaptive in-situ learning in multilayer memristor neural networks

4. Memristor crossbar architectures for implementing deep neural networks

5. A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications

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