Abstract
In recent years, non-volatile memory elements have become highly appealing for memory applications to implement a new class of storage memory that could replace flash memories in sequential logic applications, with features such as compactness, low power, fast processing speed, high endurance, and retention. The memristor is one such non-volatile element that fits the fundamental blocks of sequential logic circuits, the latch and flip-flop; hence, in this article, a non-volatile latch architecture using memristor ratioed logic (MRL) inverter and CMOS components is focused, with an additional memristor as a memory element. A Verilog-A model was used to create the memristor element. The simulation findings validated the compact, low-voltage, and reliable design of the latch design. We evolved in technology enough to create a master-slave flip-flop and arrange it to function as a counter and a shift register. Power, number of elements, cell size, energy, programming time, and robustness are compared to comparable non-volatile topologies. The proposed non-volatile latch proves non-volatility and can store data with a 24% reduction in power consumption and a near 10% reduction in area.
Publisher
Public Library of Science (PLoS)
Reference35 articles.
1. The Internet of Things: A survey;L Atzori;Comput Networks,2010
2. Chase J. Introduction The Evolution of the Internet of Things From connected things to living in the data, preparing for challenges and IoT readiness. Texas Instruments. 2020;1: 1–7. http://www.tij.co.jp/jp/lit/ml/swrb028/swrb028.pdf.
3. Magnetoresistive random access memory;D Apalkov;Proceedings of the IEEE,2016
4. Metal–oxide RRAM;HS Wong;Proceedings of the IEEE,2012
5. Phase change memory;HS Wong;Proceedings of the IEEE,2010