A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation-Reference-Cited by-同舟云学术

A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

Published:2023-05 Issue:5 Volume:70 Page:2268-2275
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Wei¹,Jiang Jing¹,Meda Abdulmelik H.²^ORCID,Ibrahim Mesfin S.³^ORCID,Zhang Guoqi⁴^ORCID,Fan Jiajie⁵^ORCID

Affiliation:

1. Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, China

2. Department of Industrial and System Engineering, The Hong Kong Polytechnic University, Hung Hom, Hong Kong

3. Centre for Advances in Reliability and Safety, InnoHK Clusters, Hong Kong

4. Department of Microelectronics Engineering, Delft University of Technology, CD Delft, The Netherlands

5. Institute of Future Lighting, Academy for Engineering and Technology, Shanghai Engineering Technology Research Center of SiC Power Device, Fudan University, Ningbo, China

Funder

National Natural Science Foundation of China

Shanghai Pujiang Program

Taiyuan Science and Technology Development Funds

Shanghai Science and Technology Development Funds

Centre for Advances in Reliability and Safety (CAiRS) admitted

AIR@InnoHK Research Cluster

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10098577.pdf?arnumber=10098577

Reference33 articles.

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4. Review of packaging schemes for power module;fengze;IEEE J Emerg Sel Topics Power Electron,2019

5. Packaging degradation studies of High Temperature SiC MOSFET discrete packages

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