Miniaturized, Ultrawideband and Low Insertion Loss <i>Ku</i> -Band GaAs On-Chip Limiter by Improved <i>π</i>-Type Topology With Capacitive Loading-Reference-Cited by-同舟云学术

Miniaturized, Ultrawideband and Low Insertion Loss Ku -Band GaAs On-Chip Limiter by Improved π-Type Topology With Capacitive Loading

Published:2023-03 Issue:3 Volume:70 Page:971-978
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Hao-Ran¹^ORCID,Wang Jun¹

Affiliation:

1. Information Materials and Intelligent Sensing Laboratory of Anhui Province and the Key Laboratory of Intelligent Computing and Signal Processing, Ministry of Education, Anhui University, Hefei, China

Funder

Major Natural Science Project of Anhui Provincial Education Department

National Natural Science Foundation of China

Innovation and Entrepreneurship of Anhui Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10032232.pdf?arnumber=10032232

Reference17 articles.

1. Research on Linearity Improvement of Silicon-Based p-i-n Diode Limiters

2. 18–40 GHz broadband limiter based on Schottky diode;dong;Proc Asia–Pacific,2015

3. High-power microwave limiters using recess-free AlGaN/GaN Schottky barrier diodes;zhao;IEEE Microw Wireless Compon Lett,2022

4. High Power Monolithic pHemt GaAs Limiter for T/R Module

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