Research on Linearity Improvement of Silicon-Based p-i-n Diode Limiters
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/8954848/08935488.pdf?arnumber=8935488
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Fast Recovery Performance and Design Method for High-Power Microwave Limiter Using GaN-SBD Technology;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. Linearity Enhancement in PIN-Diode-Based Switches;IEEE Transactions on Microwave Theory and Techniques;2024
3. High-Power GaN SBD Limiter for Sub-6G With Fast Response and Recovery;IEEE Microwave and Wireless Technology Letters;2024-01
4. A Miniaturized High-Power Integrated Front-End for Phased Array Antenna;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-11
5. Linearity of PIN Diode Switch in Both ON-state and OFF-state;2023 53rd European Microwave Conference (EuMC);2023-09-19
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