Tunnel Field-Effect Transistor Triggered Silicon-Controlled Rectifier-Reference-Cited by-同舟云学术

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Tunnel Field-Effect Transistor Triggered Silicon-Controlled Rectifier

Published:2023-06 Issue:6 Volume:70 Page:2927-2933
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Zhaonian¹^ORCID,Xu Jinghao¹^ORCID,Pu Shi²,Gao Panqi¹,Zhang Yue¹,Yang Yuan¹^ORCID,Zhang Yan³^ORCID

Affiliation:

1. Shaanxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi’an University of Technology, Xi’an, China

2. Xi’an Xiangteng Microelectronics Company Ltd., Xi’an, China

3. School of Telecommunication, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

Shaanxi Innovation Capability Support Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10111063.pdf?arnumber=10111063

Reference20 articles.

1. Scaling the Vertical Tunnel FET With Tunnel Bandgap Modulation and Gate Workfunction Engineering

2. Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

3. Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible tunnel FET performance;mayer;IEDM Tech Dig,2008

4. Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the Channel

5. Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

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