Di-Metal Chalcogenides: A New Family of Promising 2-D Semiconductors for High-Performance Transistors
Author:
Affiliation:
1. Department of Electrical Engineering, NanoLab, IIT Kanpur, Kanpur, India
2. Department of Physics, IIT Kanpur, Kanpur, India
3. Department of Materials Science and Engineering, IIT Kanpur, Kanpur, India
Funder
Prime Minister’s Research Fellowship
Swarnajayanti Fellowship, Department of Science and Technology (DST), Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10106527/10091159.pdf?arnumber=10091159
Reference63 articles.
1. High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
2. Carrier mobility tuning of MoS2 by strain engineering in CVD growth process;chen;Nano Res,2020
3. Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors
4. Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides
5. Doping in 2D
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