Preparation of High-Performance Phototransistors Combining Negative-Capacitance Effect of Gate Dielectric With WS2/MoS2 Heterojunction Channel
Author:
Affiliation:
1. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10227840/10194532.pdf?arnumber=10194532
Reference32 articles.
1. Ultrasensitive negative capacitance phototransistors
2. Transition metal dichalcogenides (TMDCs) heterostructures: Optoelectric properties
3. MoS2–OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates
4. Improved detectivity and response speed of MoS2 phototransistors based on the negative-capacitance effect and defect engineering
5. Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2Heterostructure Transistors
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Detectivity and Broadband MoS2 Phototransistor Array by Coupling Negative Capacitance and Local Surface Plasmon Resonance Effects;ACS Photonics;2024-05-16
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