Design and Performance Assessment of GaSb/Si Heterojunction Vertical TFET with Delta Doped Layer for Enhanced DC and AF/RF Characteristics-Reference-Cited by-同舟云学术

Design and Performance Assessment of GaSb/Si Heterojunction Vertical TFET with Delta Doped Layer for Enhanced DC and AF/RF Characteristics

Published:2023-01-24 Issue: Volume: Page:
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Container-title:2023 International Conference for Advancement in Technology (ICONAT)
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Author:

Bera Prabin Kumar¹,Kar Rajib¹,Mandal Durbadal¹

Affiliation:

1. NIT Durgapur,Department of Electronics and Communication Engineering,W.B.,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10079844/10079947/10080244.pdf?arnumber=10080244

Reference17 articles.

1. Doublegate strained-ge heterostructure tunnelling FET (TFET) with record high drive currents and60 mV/dec subthreshold slope;krishnamohan;IEDM Tech Dig,2008

2. Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications

3. Implementation of linearly modulated work function AσB1−σ gate electrode and Si0.55Ge0.45 N+ pocket doping for performance improvement in gate stack vertical-TFET

4. Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

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