Anomalous behavior of surface leakage currents in heavily doped gated-diodes-Reference-Cited by-同舟云学术

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Anomalous behavior of surface leakage currents in heavily doped gated-diodes

Published:1993 Issue:12 Volume:40 Page:2273-2281
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hurkx F.,Peek H.L.,Slotboom J.W.,Windgassen R.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/6384/00249475.pdf?arnumber=249475

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors;IEEE Sensors Journal;2012-06

2. High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions;Journal of The Electrochemical Society;2011

3. (Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions;ECS Transactions;2010-10-01

4. Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n/sup +/-p-well diodes;IEEE Transactions on Electron Devices;2001

5. Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects;Journal of The Electrochemical Society;2001

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