Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters-Reference-Cited by-同舟云学术

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Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters

Published:2021 Issue: Volume:2 Page:145-154
ISSN:2644-1314
Container-title:IEEE Open Journal of Power Electronics
language:
Short-container-title:IEEE Open J. Power Electron.

Author:

Shen Chengjun^ORCID,Jahdi Saeed^ORCID,Alatise Olayiwola^ORCID,Ortiz-Gonzalez Jose^ORCID,Aithal Avinash,Mellor Phil^ORCID

Funder

EA Technology

Engineering and Physical Sciences Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Medicine

Link

http://xplorestaging.ieee.org/ielx7/8782709/9343742/09360510.pdf?arnumber=9360510

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08

2. Electrothermal power cycling of 15 kV SiC PiN diodes;Microelectronics Reliability;2024-02

3. Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4h-Sic;2024

4. FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes;Microelectronics Reliability;2022-11

5. Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09

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