The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET-Reference-Cited by-同舟云学术

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The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS₂ based MOSFET

Published:2021-11-03 Issue: Volume: Page:
ISSN:
Container-title:2021 International Conference on Information Science and Communications Technologies (ICISCT)
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Author:

Atamuratov A. E.¹,Saparov X. Sh.¹,Atamuratov T.A.¹,Yusupov A.²,Schwierz F.³

Affiliation:

1. Urgench State University,Physics department,Urgench,Uzbekistan

2. Tashkent University of Information Technologies,department of electronics and radiotechniks,Tashkent,Uzbekistan

3. Technical University of Ilmenau,department of micro and nanoelectronic systems,Ilmenau,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9670004/9670007/09670397.pdf?arnumber=9670397

Reference12 articles.

1. High-performance MoS2 transistors with low-resistance molybdenum contacts

2. The prospects of transition metal dichalcogenides for ultimately scaled CMOS

3. Transition metal dichalcogenide MoS 2 field-effect transistors for analog circuits: A simulation study

4. Analytical insight into the lattice thermal conductivity and heat capacity of monolayer MoS 2

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs;Applied Sciences;2023-05-17

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