Evaluation of the Proton Induced Bulk Damage in SDRAM Utilizing 90 nm Process Technology-Reference-Cited by-同舟云学术

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Evaluation of the Proton Induced Bulk Damage in SDRAM Utilizing 90 nm Process Technology

Published:2007-12 Issue:6 Volume:54 Page:2233-2237
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Shindou H.,Kuboyama S.,Ikeda N.,Satoh Y.,Hirao T.,Tamura T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/4394990/04395080.pdf?arnumber=4395080

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD simulation of radiation-induced leakage current in 1T1C SDRAM;Microelectronics Reliability;2018-09

2. Proton-Induced Single-Event Degradation in SDRAMs;IEEE Transactions on Nuclear Science;2016-08

3. Single Event Hard Errors in SRAM Under Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2014-10

4. SEEs Induced by High-Energy Protons and Neutrons in SDRAM;2011 IEEE Radiation Effects Data Workshop;2011-07

5. An Approach to Single Event Testing of SDRAMs;IEEE Transactions on Nuclear Science;2010-10

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