TCAD simulation of radiation-induced leakage current in 1T1C SDRAM

Author:

Nguyen Hoang T.,Rodriguez A.,Wrobel F.,Michez A.,Bezerra F.,Chatry N.,Vandevelde B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Light particle-induced single event degradation in SDRAMs;David;IEEE Trans. Nucl. Sci.,2006

2. “Experimental Characterization and In-flight Observation of Weakened Cell in SDRAM,” Presented at the RADECS, Moscow;Samaras,2015

3. Evaluation of the proton induced bulk damage in SDRAM utilizing 90 nm process technology;Shindou;IEEE Trans. Nucl. Sci.,2007

4. The random telegraph signal behavior of intermittently stuck bits in SDRAMs;Chugg;IEEE Trans. Nucl. Sci.,2009

5. “Proton Testing of Micro Advanced Stellar Compass TEC-QCA Support Activity to PROBA-II,” Presented at the 8th ESA/ESTEC D/TECQCA Final Presentation Day;Aage,2007

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