Modeling for floating body effects in fully depleted SOI MOSFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/5182/00199364.pdf?arnumber=199364
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An Analytical Model for Weak Avalanche Induced Kink Effect of PDSOI nMOSFETs;IEEE Transactions on Electron Devices;2023-07
2. Probing of quantum energy levels in nanoscale body SOI-MOSFET: Experimental and simulation results;Journal of Applied Physics;2018-09-28
3. Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance;Solid-State Electronics;2014-01
4. RELATIONSHIP BETWEEN SILICON-ON-INSULATOR KINK AND RADIATION EFFECTS;International Journal of Modern Physics E;2011-06
5. A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect;International Journal of Electronics;1999-06
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