Probing of quantum energy levels in nanoscale body SOI-MOSFET: Experimental and simulation results-Reference-Cited by-同舟云学术

Probing of quantum energy levels in nanoscale body SOI-MOSFET: Experimental and simulation results

Published:2018-09-28 Issue:12 Volume:124 Page:124306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bendayan M.¹,Mandelbaum Y.²,Teller G.²,Chelly A.³,Karsenty A.²

Affiliation:

1. Rafael Advanced Defense Systems Ltd, Ctr 630, P.O. Box 2250, 3102102 Haifa, Israel

2. Department of Applied Physics/Electro-Optics Engineering, Advanced Laboratory of Electro-Optics (ALEO), Lev Academic Center, 9116001 Jerusalem, Israel

3. Faculty of Engineering, Bar-Ilan University, 52900 Ramat Gan, Israel

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041857

Reference28 articles.

1. FinFETs and Other Multi-Gate Transistors

2. Nanoscale MOS Transistors

3. Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance

4. Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

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