In-fab assessment of heat budget in 3D NAND flash devices using terahertz wave-based metrology system-Reference-Cited by-同舟云学术

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In-fab assessment of heat budget in 3D NAND flash devices using terahertz wave-based metrology system

Published:2023-09-17 Issue: Volume: Page:
ISSN:
Container-title:2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Baek Inkeun¹,Ryu SungYoon²,Jeon Ikseon¹,Jang Yoonkyung¹,Park Suhwan¹,Choi Eun Hyuk¹,Kim Wontae¹,Priwisch Martin¹,Kim Taejoong¹,Lee Myungjun¹,Yang Yusin³

Affiliation:

1. Samsung Electronics Co., Ltd.,Mechatronics Research,Republic of Korea,18848

2. Samsung Electronics Co., Ltd.,Memory Manufacturing Operation Center,Republic of Korea,18848

3. Samsung Electronics Co., Ltd.,Process Development,Republic of Korea,18848

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299103.pdf?arnumber=10299103

Reference5 articles.

1. A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy

2. Application of secondary ion mass spectrometry for analyzing the composition and structure of surface layers of fine materials

3. Photoconductive microprobe enabled on-chip and wafer-scale Terahertz sensing applications

4. Influence of the spacer dielectric processes on PMOS junction properties

5. Highly Manufacturable 7th Generation 3D NAND Flash Memory with COP structure and Double Stack Process;kim;2021 Symposium on VLSI Technology,2021

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