Author:
Weimann Nils G.,Johansen Tom K.,Stoppel Dimitri,Matalla Matthias,Brahem Mohamed,Nosaeva Ksenia,Boppel Sebastian,Volkmer Nicole,Ostermay Ina,Krozer Viktor,Ostinelli Olivier,Bolognesi Colombo R.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
15 articles.
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1. Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
2. A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. Mathematical Analysis of Switching HBT Devices;2022 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2022-12-12
4. Front-End Active Components for future 6G Wireless Communication in InP-DHBT Technology;2022 24th International Microwave and Radar Conference (MIKON);2022-09-12
5. An Injection-Lockable InP-DHBT Source Operating at 421 GHz with −2.4 dBm Output Power and 1.7% DC-to-RF Efficiency;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19