A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs-Reference-Cited by-同舟云学术

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A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs

Published:2018-10 Issue:10 Volume:65 Page:4271-4275
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ji Dong^ORCID,Li Wenwen^ORCID,Chowdhury Srabanti

Funder

Advanced Research Projects Agency - Energy

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielaam/16/8469117/8444476-aam.pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical GaN MOSFET Power Devices;Micromachines;2023-10-16

2. Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-09

3. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-08

4. Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al₂O₃ deposited after ultra-high-pressure annealing;Japanese Journal of Applied Physics;2023-07-25

5. Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs;ECS Journal of Solid State Science and Technology;2023-05-01

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