100-Gb/s Multiplexing and Demultiplexing IC Operations in InP HEMT Technology-Reference-Cited by-同舟云学术

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100-Gb/s Multiplexing and Demultiplexing IC Operations in InP HEMT Technology

Published:2004-01 Issue:1 Volume:39 Page:207-213
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Murata K.,Sano K.,Kitabayashi H.,Sugitani S.,Sugahara H.,Enoki T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/28187/01261302.pdf?arnumber=1261302

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications;Materials Science in Semiconductor Processing;2021-06

2. Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing;Journal of Lightwave Technology;2021-05-15

3. Tailoring of elastic, optoelectronic, and thermal properties of antimony doped indium phosphorus alloys for optoelectronic applications;Journal of Alloys and Compounds;2021-03

4. Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs*;Chinese Physics B;2021-01-01

5. InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review;AEU - International Journal of Electronics and Communications;2018-09

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