A novel high-speed sense amplifier for Bi-NOR flash memories
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/4/30218/01388641.pdf?arnumber=1388641
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A low-power high-performance voltage sense amplifier for static RAM and comparison with existing current/voltage sense amplifiers;International Journal of Information Technology;2022-04-12
2. Parametric Extraction and Comparison of Different Voltage-Mode based Sense Amplifier Topologies;2021 3rd International Conference on Advances in Computing, Communication Control and Networking (ICAC3N);2021-12-17
3. Array Design of High-Density Emerging Memories Making Clamped Bit-Line Sense Amplifier Compatible with Dummy Cell Average Read Scheme;IEICE Transactions on Electronics;2020-08-01
4. Twin-Coupled Sense Amplifier to improve margin in 1T-1MTJ based MRAM array;2020 24th International Symposium on VLSI Design and Test (VDAT);2020-07
5. 28nm STT-MRAM Array and Sense Amplifier;2019 8th International Conference on Modern Circuits and Systems Technologies (MOCAST);2019-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3