A comparative study of self-heating effects in 3nm node GAAFETs and FinFETs
Author:
Affiliation:
1. Peking University,School of Integrated Circuits,Beijing,China,100871
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963426.pdf?arnumber=9963426
Reference9 articles.
1. The Complementary FET (CFET) for CMOS scaling beyond N3
2. Reliability Modeling and Analysis of Hot-Carrier Degradation in Multiple-Fin SOI n-Channel FinFETs With Self-Heating
3. On the Formulation of Self-Heating Models for Circuit Simulation
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1. Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
2. Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method;Electronics;2023-08-31
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