All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo<sub>2</sub>O<sub>4</sub> Gates-Reference-Cited by-同舟云学术

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All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo₂O₄ Gates

Published:2015-12 Issue:12 Volume:62 Page:4004-4008
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Klupfel Fabian Johannes,Holtz Agnes,Schein Friedrich-Leonhard,von Wenckstern Holger,Grundmann Marius

Funder

European Social Fund

Deutsche Forschungsgemeinschaft

Leipzig School of Natural Sciences BuildMoNa

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7331113/07323825.pdf?arnumber=7323825

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dual-Junctions Field Effect Transistor Based on MoS₂/Te/MoS₂;IEEE Transactions on Electron Devices;2023-06

2. All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride;Advanced Electronic Materials;2021-03-18

3. High-Gain Transparent Inverters Based on Deuterated ZnO TFTs Fabricated by Atomic Layer Deposition;IEEE Electron Device Letters;2020-10

4. Ultrahigh-performance integrated inverters based on amorphous zinc tin oxide deposited at room temperature;APL Materials;2020-09-01

5. Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates;APL Materials;2020-06-01

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