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A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs

  • Published:2015-07 Issue:7 Volume:62 Page:2244-2250
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Wier Brian R.ORCID,Raghunathan Uppili S.,Chakraborty Partha S.,Yasuda Hiroshi,Menz Philip,Cressler John D.

Funder

Semiconductor Research Corporation

Texas Instruments, Inc., Dallas, TX, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing DC and RF Reliability of SiGe HBTs Stress-Engineered Using Dummy BEOL Layers;IEEE Transactions on Electron Devices;2024

2. The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. Hot Carrier Effects on High Frequency Characteristics of SiGe HBTs;International Journal of Electronics Letters;2023-10-09

5. New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs;IEEE Journal of the Electron Devices Society;2023
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