New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs-Reference-Cited by-同舟云学术

New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Published:2023 Issue: Volume:11 Page:30-35
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Zhu Kunfeng¹,Zhang Peijian²^ORCID,Xu Zicheng³^ORCID,Wang Tao¹,Yi Xiaohui²,Hong Min²,Yang Yonghui¹,Zhang Guangsheng¹,Liu Jian¹,Wei Jianan²^ORCID,Pu Yang²,Huang Dong¹,Luo Ting²,Chen Xian²,Tang Xinyue²,Tan Kaizhou²,Chen Wensuo⁴^ORCID

Affiliation:

1. Semiconductor Manufacturing Process Development Department, Sichuan Institute of Solid-state Circuits, Chongqing, China

2. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China

3. Glasgow College, University of Electronic Science and Technology of China, Chengdu, China

4. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10026655.pdf?arnumber=10026655

Reference23 articles.

1. Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs

2. Measurement based accurate definition of the SOA edges for SiGe HBTs

3. Channel hot carrier induced volatile oxide traps responsible for random telegraph signals in submicron pMOSFETs;rouf;Solid-State Electron,2020

4. Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

5. Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs

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