Origin of Current Variations in Ultrathin Bipolar Junction Transistors Under Bending Stress-Reference-Cited by-同舟云学术

Origin of Current Variations in Ultrathin Bipolar Junction Transistors Under Bending Stress

Published:2023-09 Issue:9 Volume:70 Page:4532-4537
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hong Min¹^ORCID,Zhang Peijian¹^ORCID,Chen Xian¹,Yi Xiaohui¹,Tang Xinyue¹,Han Weimin²,Liu Jiao²^ORCID,Qiu Sheng²,Luo Ting¹,Liu Jian²,Wang Peng¹,Fu Xiaojun¹,Chen Chao³,Yang Yonghui²

Affiliation:

1. National Key Laboratory of Integrated Circuits and Microsystems, Chongqing, China

2. Sichuan Institute of Solid-State Circuits, Chongqing, China

3. Chongqing Gigachip Technology Company Ltd., Chongqing, China

Funder

Natural Science Foundation of Chongqing, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10196321.pdf?arnumber=10196321

Reference32 articles.

1. Ultra-thin chips for high-performance flexible electronics

2. CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

3. Stretchable and Foldable Silicon Integrated Circuits

4. Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems

5. Bendable 190-GHz Transmitter on 20-μm Ultra-Thin SiGe BiCMOS

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