4H-SiC p-i-n diode as Highly Linear Temperature Sensor-Reference-Cited by-同舟云学术

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4H-SiC p-i-n diode as Highly Linear Temperature Sensor

Published:2016-01 Issue:1 Volume:63 Page:414-418
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rao Sandro^ORCID,Pangallo Giovanni,Della Corte Francesco G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7365508/7331278.pdf?arnumber=7331278

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium tin oxide as a dual region resistance temperature detector;Measurement: Sensors;2024-08

2. Application of bulk silicon carbide technology in high temperature MEMS sensors;Materials Science in Semiconductor Processing;2024-04

3. Design of High-Performance Temperature Sensor Based on Planar 4H-SiC Junction Barrier Schottky Diode;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors;IEEE Transactions on Nuclear Science;2023-10

5. Integrated Lateral SBD Temperature Sensor of a 4H-SiC VDMOS for Real-Time Temperature Monitoring;IEEE Transactions on Electron Devices;2023-07

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