Nitride-based LEDs with n/sup -/-GaN current spreading layers-Reference-Cited by-同舟云学术

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Nitride-based LEDs with n/sup -/-GaN current spreading layers

Published:2005-12 Issue:12 Volume:26 Page:891-893
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Su Y.K.,Chang S.J.,Wei S.C.,Chuang R.W.,Chen S.M.,Li W.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32998/01546144.pdf?arnumber=1546144

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer;Optics Letters;2022-08-08

2. Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes;IEEE Electron Device Letters;2021-09

3. Electronic and Optical Properties of Staggered ZnO/ZnO1−xSx-ZnO1−ySy/ZnO Quantum Wells for Bluish-Green Light-Emitting Diodes;Journal of the Korean Physical Society;2019-12

4. Enhanced performance of GaN-based light-emitting diodes with composite electron blocking layer;Optik;2017-05

5. Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes;Journal of Crystal Growth;2017-04

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