Nitride-based p-i-n bandpass photodetectors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/30402/01397850.pdf?arnumber=1397850
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical Study of Sputter-Grown ZnO-Based p-i-n Homojunction UV Photodetector;IEEE Sensors Journal;2021-03-15
2. Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector;9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging;2019-02-08
3. Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors;2015 International Conference on Optical Instruments and Technology: Optical Sensors and Applications;2015-08-10
4. Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme;International Journal of Electrochemical Science;2013-08
5. GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring;IEEE Transactions on Electron Devices;2013-03
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