Power transistors fabricated using isotopically purified silicon (/sup 28/Si)-Reference-Cited by-同舟云学术

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Power transistors fabricated using isotopically purified silicon (/sup 28/Si)

Published:2005-06 Issue:6 Volume:26 Page:404-406
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kizilyalli I.C.,Safar H.,Herbsommer J.,Burden S.J.,Gammel P.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/30894/01432913.pdf?arnumber=1432913

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isotopic enrichment of silicon by high fluence 28Si− ion implantation;Physical Review Materials;2021-01-08

2. The new kilogram definition based on counting the atoms in a28Si crystal;Contemporary Physics;2012-11

3. Experimental investigations of silicon tetrafluoride decomposition in ECR discharge plasma;Review of Scientific Instruments;2011-06

4. Isotopic Superlattices for Perfect Phonon Reflection;Journal of Electronic Materials;2010-03-23

5. Enrichment of silicon for a better kilogram;physica status solidi (a);2009-09-30

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