HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance
Author:
Affiliation:
1. IIT Dharwad,Department of Electrical Engineering,Karnataka,India,580011
2. University of Limoges,XLIM Laboratory, CNRS,Brive,France,F-19100
3. III-V Lab,Palaiseau,France,91120
4. United Monolithic Semiconductors,Villebon-sur-Yvette,France,91140
Funder
DGA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10038779/10038515/10038964.pdf?arnumber=10038964
Reference9 articles.
1. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
2. Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model
3. Physics based modeling of gate current including fowler-nordheim tunneling in GaN HEMT;ghosh;IEEE 3rd Int Conf Emerg Electron (ICEE),0
4. Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties
5. Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
2. Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure;Micromachines;2023-09-26
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