Physical Analysis of Lateral-BTBT Induced GIDL Current in GaN-Based FinFET Devices
Author:
Affiliation:
1. Malaviya National Institute of Technology,Department of Electronics & Communication Engineering,Jaipur,India
2. Jaypee Institute of Information Technology,Department of Electronics & Communication Engineering,Noida,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10542546/10542531/10542601.pdf?arnumber=10542601
Reference18 articles.
1. Nanowire Transistors
2. Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits
3. Cramming more components onto integrated circuits;Moore;Electronics,1965
4. Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD
5. Gallium nitride devices for power electronic applications
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