Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability-Reference-Cited by-同舟云学术

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

Published:2023 Issue: Volume: Page:1-12
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zanoni Enrico¹^ORCID,Santi Carlo De¹^ORCID,Gao Zhan¹^ORCID,Buffolo Matteo¹^ORCID,Fornasier Mirko¹^ORCID,Saro Marco¹^ORCID,Pieri Francesco De¹^ORCID,Rampazzo Fabiana¹^ORCID,Meneghesso Gaudenzio¹^ORCID,Meneghini Matteo¹^ORCID,Zagni Nicolò²^ORCID,Chini Alessandro²^ORCID,Verzellesi Giovanni³^ORCID

Affiliation:

1. Department of Information Engineering, Universita degli Studi di Padova, Padova, Italy

2. Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, Italy

3. Dipartimento di Scienze e Metodi dell’Ingegneria, University of Modena and Reggio Emilia, Reggio Emilia, Italy

Funder

Italian Ministry of University and Research

Paul Maki

EC Horizon 2020 ECSEL Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/10274766.pdf?arnumber=10274766

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