1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings-Reference-Cited by-同舟云学术

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Published:2023-09 Issue:9 Volume:70 Page:4578-4583
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cho Minkyu¹^ORCID,Xu Zhiyu¹^ORCID,Bakhtiary-Noodeh Marzieh²,Detchprohm Theeradetch¹^ORCID,Daeumer Matthias A.³,Yoo Jae-Hyuck³,Shao Qinghui³,Laurence Ted A.³,Key Daryl⁴,Hashimoto Tadao⁴,Letts Edward⁴,Dupuis Russell D.⁵^ORCID,Shen Shyh-Chiang¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA

3. Lawrence Livermore National Laboratory, Livermore, CA, USA

4. SixPoint Materials, Buellton, CA, USA

5. School of Electrical and Computer Engineering, School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA

Funder

U.S. Department of Energy (DOE), Office of Energy Efficiency and Renewable Energy (EERE), Advanced Manufacturing Office

U.S. Department of Energy by Lawrence Livermore National Laboratory

Facilities of the Georgia Tech Institute for Electronics and Nanotechnology, a Member of the National Nanotechnology Coordinated Infrastructure, which is through the National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/10227840/10194537-aam.pdf

Reference44 articles.

1. Wafer-scale Fabrication of Vertical GaN p-n Diodes with Graded JTE Structures Using Multiple-zone Boron Implantation

2. Temperature-Dependent Characteristics of GaN Homojunction Rectifiers

3. 1200-V GaN-on-Si Quasi-Vertical p-n Diodes

4. Identification of donors, acceptors, and traps in bulk-like HVPE GaN

5. Potential for neutron and proton transmutation doping of GaN and Ga2O3

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