Physics-Based Modeling and Validation of 2-D Schottky Barrier Field-Effect Transistors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Champaign, IL, USA
2. Department of Electrical and Computer Engineering, University of Illinois, Champaign, IL, USA
Funder
Semiconductor Research Corporation
National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/16/10081247/10054538-aam.pdf
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1. Two-dimensional semiconductors for transistors
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5. Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk
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