Design for Variability: Counter-Doped Source/Drain Epitaxy Pockets in Gate-All-Around FET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Design for Variability: Counter-Doped Source/Drain Epitaxy Pockets in Gate-All-Around FET

Published:2024-01 Issue:1 Volume:71 Page:400-405
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lim Jaehyuk¹^ORCID,Han Donghwan²^ORCID,Seon Sangwoo³,Baac Hyoung Won¹^ORCID,Shin Changhwan²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea

2. School of Electrical Engineering, Korea University, Seoul, South Korea

3. Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, South Korea

Funder

National Research Foundation of Korea

Korea government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10325525.pdf?arnumber=10325525

Reference17 articles.

1. Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology

2. 45nm high-k + metal gate strain-enhanced CMOS transistors

3. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

4. 3 nm GAA technology featuring multi-bridge-channel FET for low power and high performance applications;Bae

5. Managing process variation in Intel’s 45 nm CMOS technology;Kuhn;Intel Technol. J.,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process;Nanomaterials;2024-05-23

2. Self‐Healing Magnetic Field‐Assisted Threshold Switching Device Utilizing Dual Field‐Driven Filamentary Physics;Advanced Electronic Materials;2024-05-13

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3