Multidomain Interactions in Perpendicular Magnetic Tunnel Junction (p-MTJ): Enabling Multistate MRAM
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology-Kanpur, Kanpur, India
Funder
Swarna Jayanti Fellowship
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10106527/10083091.pdf?arnumber=10083091
Reference69 articles.
1. 2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
2. Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects
3. High-Performance Shape-Anisotropy Magnetic Tunnel Junctions down to 2.3 nm
4. Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green’s function approach
5. Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction
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