Author:
Shukla Alok Kumar,Nandi Ashutosh,Dasgupta Sudeb
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Analysis of the parasitic S/D resistance in multiple-gate FETs;Dixit;IEEE Trans Electron Devices,2005
2. Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET;Pezzimenti;Solid State Electron,2019
3. Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts;Farokhnejad;Solid State Electron,2019
4. International Technology Roadmap for Semiconductors (ITRS) 2007 for Metrology. Available: www.itrs.net.
5. Ang KW, Barnett J, Loh WY, Huang J, Min BG, Hung PY, Ok I, Yum JH, Bersuker G, Rodgers M, Kaushik V, Gausepohl S, Hobbs C, Kirsch PD, Jammy R, 300-mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj~5nm) formed with molecular monolayer doping technique, in Proc. IEEE IEDM, pp. 35.5.1–35.5.4, Dec. 2011. doi: 10.1109/IEDM.2011.6131679.
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