A High-Power and Broadband GaN SPDT MMIC Switch Using Gate-Optimized HEMTs

Author:

Erturk Volkan1ORCID,Gurdal Armagan2ORCID,Ozbay Ekmel3ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. Gallium Semiconductor, Nijmegen, The Netherlands

3. Nanotechnology Research Center (NANOTAM), the Department of Physics, the Department of Electrical and Electronics Engineering, and the Institute of Materials Science and Nanotechnology (UNAM), Bilkent University, Ankara, Turkey

Funder

Turkcell Technology within the framework of 5G and Beyond Joint Graduate Support Program coordinated by Information and Communication Technologies Authority

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Reference17 articles.

1. Wideband high power GaN on SiC SPDT switch MMICs;campbell;IEEE MTT-S Int Microw Symp Dig,2010

2. High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors;hettak;Proc 7th Eur Microw Integr Circuits Conf (EuMIC),2012

3. A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications

4. A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends

5. Design Considerations for GaN based X-Band, High Power and High Isolation SPDT T/R Switch

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