A High-Power and Broadband GaN SPDT MMIC Switch Using Gate-Optimized HEMTs-Reference-Cited by-同舟云学术

A High-Power and Broadband GaN SPDT MMIC Switch Using Gate-Optimized HEMTs

Published:2023-08 Issue:8 Volume:33 Page:1207-1210
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Erturk Volkan¹^ORCID,Gurdal Armagan²^ORCID,Ozbay Ekmel³^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. Gallium Semiconductor, Nijmegen, The Netherlands

3. Nanotechnology Research Center (NANOTAM), the Department of Physics, the Department of Electrical and Electronics Engineering, and the Institute of Materials Science and Nanotechnology (UNAM), Bilkent University, Ankara, Turkey

Funder

Turkcell Technology within the framework of 5G and Beyond Joint Graduate Support Program coordinated by Information and Communication Technologies Authority

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10213341/10130457.pdf?arnumber=10130457

Reference17 articles.

1. Wideband high power GaN on SiC SPDT switch MMICs;campbell;IEEE MTT-S Int Microw Symp Dig,2010

2. High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors;hettak;Proc 7th Eur Microw Integr Circuits Conf (EuMIC),2012

3. A High Power, GaN, Quarter-Wave Length Switch for X-Band Applications

4. A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends

5. Design Considerations for GaN based X-Band, High Power and High Isolation SPDT T/R Switch

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A DC-50 GHz SPDT Switch for 5G Wireless Applications;Signals and Communication Technology;2024