Design Considerations for GaN based X-Band, High Power and High Isolation SPDT T/R Switch

Author:

Akmal Rehan,Arif Muhammad Shoaib,Saqib Muhammad,Imran Syed Ali

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. X‐band high isolation single pole double throw switch based on resonant concept;Microwave and Optical Technology Letters;2024-06

2. Design of DC-18 GHz high-isolation and high-power SPDT;Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023);2024-01-15

3. A 6–18 GHz High Power-Handling Switch in GaN Technology;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

4. A High-Power and Broadband GaN SPDT MMIC Switch Using Gate-Optimized HEMTs;IEEE Microwave and Wireless Technology Letters;2023-08

5. GaN based High Power SPDT Switch for Single Chip X-Band T/R Module Front-End;2021 1st International Conference on Microwave, Antennas & Circuits (ICMAC);2021-12-21

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